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    • 193 nm lithography using a negative acting P(SI-CMS) resist 

      Smith, Bruce; Novembre, Anthony; Mixon, David (Elsevier Science B.V., Amsterdam, 1997-09)
      Copolymers of trimethysilylmethyl methacrylate and chloromethylstyrene [P(SI-CMS)] have been formulated as negative resists for exposure at 193 nm. To achieve maximum sensitivity, absorption has been targeted so that the ...