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dc.contributor.authorMoore, Andrewen_US
dc.contributor.authorNinkov, Zoranen_US
dc.contributor.authorForrest, Williamen_US
dc.date.accessioned2006-12-18T16:56:27Zen_US
dc.date.available2006-12-18T16:56:27Zen_US
dc.date.issued2006-07en_US
dc.identifier.citationOptical Engineering 45N7 (2006) 076402-1-9en_US
dc.identifier.issn0091-3286en_US
dc.identifier.urihttp://hdl.handle.net/1850/3044en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractPixels in both hybridized and monolithic complementary metal-oxide semiconductor (CMOS) detector arrays may couple capacitively to their neighboring pixels. This “interpixel capacitance” can signifi- cantly distort the characterization of conversion efficiency and modulation transfer function (MTF) in MOS devices. These effects have been largely unaccounted for in measurements to date. In this work, the effects of this coupling are investigated. Compensation methods for these errors are described and applied to silicon P-I-N array measurements. The measurement of Poisson noise, traditionally done by finding the mean square difference in a pair of images, needs to be modified to include the mean square correlation of differences with neighboring pixels.en_US
dc.description.sponsorshipWe would like to thank NASA for supporting this work through various NASA grants supporting the P-I-N array research, and acknowledge NYSTAR and the New York State Center for Advanced Technology(Center for Electronic Imaging Systems) for additional support. The University of Rochester NIR laboratory provided the InSb data. Gert Finger (ESO) and Don Figer (STScI) aided critique that was greatly appreciated while they prepared for the 2005 Scientific Detector Workshop in Italy.en_US
dc.format.extent271351 bytesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherInternational Society for Optical Engineering (SPIE)en_US
dc.relation.ispartofseriesvol. 45en_US
dc.relation.ispartofseriesno. 7en_US
dc.subjectComplementary metal oxide semiconductorsen_US
dc.subjectCross talken_US
dc.subjectDetector arrayen_US
dc.subjectInterpixel capacitanceen_US
dc.subjectModulation transfer functionen_US
dc.subjectQuantum efficiencyen_US
dc.titleQuantum efficiency overestimation and deterministic cross talk resulting from interpixel capacitanceen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1117/1.2219103


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