dc.contributor.author | Deeg, Hans | en_US |
dc.contributor.author | Ninkov, Zoran | en_US |
dc.date.accessioned | 2006-12-18T17:32:02Z | en_US |
dc.date.available | 2006-12-18T17:32:02Z | en_US |
dc.date.issued | 1995-01 | en_US |
dc.identifier.citation | Optical Engineering 34N1 (1995) 43-49 | en_US |
dc.identifier.issn | 0091-3286 | en_US |
dc.identifier.uri | http://hdl.handle.net/1850/3095 | en_US |
dc.description | RIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/ | |
dc.description.abstract | Characterization of a Kodak KAF 4200 CCD chip, coated with
the UV converter Lumigen, is described. This chip is very similar to a
chip described by Ninkov, Backer, and Bretz [Proc. SPIE 1987, 14
(1 993)], except for the Lumigen coating. The major difference in perlormance
is in the existence of significant deviations from linear output for
a given input up to 30% at low count rates. The nonlinearity varies across
the chip and is largest for pixels that are the most distant from the readout
serial register. Tests revealed that the nonlinearity depends on wavelength
in a minor way only, and is temperature dependent. Characterization
of the nonlinearity allowed the creation of a function that allows
for correction of the data. It is unlikely that this nonlinearity can be explained
using arguments invoking deferred charge effects or peculiar
behavior of the on-chip amplifier. Comparison with similar but uncoated
CCD chips makes the Lumigen coating a likely source of the problem. | en_US |
dc.description.sponsorship | We thank Bruce Burkey, T. H. Lee, and their colleagues at
Kodak for helpful discussions and assistance. We thank the
University of Rochester for allowing the generous use of the
Mees observatory. This work was supported through an NSF
Engineering Directorate IUCRC grant and a New York State
CAT grant. We thank the anonymous referees for suggestions
improving the presentation of this paper. | en_US |
dc.format.extent | 223736 bytes | en_US |
dc.format.mimetype | application/pdf | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | International Society for Optical Engineering (SPIE) | en_US |
dc.relation.ispartofseries | vol. 34 | en_US |
dc.relation.ispartofseries | no.1 | en_US |
dc.subject | CCD chip | en_US |
dc.subject | Low-light imaging | en_US |
dc.subject | Nonlinearity | en_US |
dc.subject | Photometry | en_US |
dc.title | Characterization of a large-format charge-coupled device | en_US |
dc.type | Article | en_US |
dc.identifier.url | http://dx.doi.org/10.1117/12.188291 | |