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dc.contributor.authorDeeg, Hansen_US
dc.contributor.authorNinkov, Zoranen_US
dc.date.accessioned2006-12-18T17:32:02Zen_US
dc.date.available2006-12-18T17:32:02Zen_US
dc.date.issued1995-01en_US
dc.identifier.citationOptical Engineering 34N1 (1995) 43-49en_US
dc.identifier.issn0091-3286en_US
dc.identifier.urihttp://hdl.handle.net/1850/3095en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractCharacterization of a Kodak KAF 4200 CCD chip, coated with the UV converter Lumigen, is described. This chip is very similar to a chip described by Ninkov, Backer, and Bretz [Proc. SPIE 1987, 14 (1 993)], except for the Lumigen coating. The major difference in perlormance is in the existence of significant deviations from linear output for a given input up to 30% at low count rates. The nonlinearity varies across the chip and is largest for pixels that are the most distant from the readout serial register. Tests revealed that the nonlinearity depends on wavelength in a minor way only, and is temperature dependent. Characterization of the nonlinearity allowed the creation of a function that allows for correction of the data. It is unlikely that this nonlinearity can be explained using arguments invoking deferred charge effects or peculiar behavior of the on-chip amplifier. Comparison with similar but uncoated CCD chips makes the Lumigen coating a likely source of the problem.en_US
dc.description.sponsorshipWe thank Bruce Burkey, T. H. Lee, and their colleagues at Kodak for helpful discussions and assistance. We thank the University of Rochester for allowing the generous use of the Mees observatory. This work was supported through an NSF Engineering Directorate IUCRC grant and a New York State CAT grant. We thank the anonymous referees for suggestions improving the presentation of this paper.en_US
dc.format.extent223736 bytesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherInternational Society for Optical Engineering (SPIE)en_US
dc.relation.ispartofseriesvol. 34en_US
dc.relation.ispartofseriesno.1en_US
dc.subjectCCD chipen_US
dc.subjectLow-light imagingen_US
dc.subjectNonlinearityen_US
dc.subjectPhotometryen_US
dc.titleCharacterization of a large-format charge-coupled deviceen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1117/12.188291


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