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193 nm lithography using a negative acting P(SI-CMS) resist

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dc.contributor.author Smith, Bruce en_US
dc.contributor.author Novembre, Anthony en_US
dc.contributor.author Mixon, David en_US
dc.date.accessioned 2007-07-05T13:43:05Z en_US
dc.date.available 2007-07-05T13:43:05Z en_US
dc.date.issued 1997-09 en_US
dc.identifier.citation Microelectronic Engineering 34N2 (1997) 137-145 en_US
dc.identifier.issn 0167-9317 en_US
dc.identifier.uri http://hdl.handle.net/1850/4207 en_US
dc.description RIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstract Copolymers of trimethysilylmethyl methacrylate and chloromethylstyrene [P(SI-CMS)] have been formulated as negative resists for exposure at 193 nm. To achieve maximum sensitivity, absorption has been targeted so that the amount of radiation exposing the base of a given film thickness is I0e^−1, leading to an optimum optical absorbance of log10e, or 0.434. Through control of the mole ratio of the monomers in the P(SI-CMS) copolymer, optimum response has been tailored for coating thicknesses from 2000 Å to 5500 Å. Optimal formulations yield working sensitivities of from 4 to 20 mJ/cm^2 for materials having a Mw of 4 × 10^4 g/mole, with resolution demonstrated below 0.4 μm. Resists exhibit etching resistance in O2 RIE and are suitable for application in both single layer and bi-layer processes (Refer to PDF file for exact formulas). en_US
dc.description.sponsorship n/a en_US
dc.language.iso en_US en_US
dc.publisher Elsevier Science B.V., Amsterdam en_US
dc.relation.ispartofseries vol. 34 en_US
dc.relation.ispartofseries no. 2 en_US
dc.title 193 nm lithography using a negative acting P(SI-CMS) resist en_US
dc.type Article en_US
dc.subject.keyword Copolymers en_US
dc.subject.keyword Crosslinking en_US
dc.subject.keyword Negative resists en_US
dc.identifier.url http://dx.doi.org/10.1016/S0167-9317(97)00005-1

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