dc.contributor.author | Smith, Bruce | en_US |
dc.contributor.author | Novembre, Anthony | en_US |
dc.contributor.author | Mixon, David | en_US |
dc.date.accessioned | 2007-07-05T13:43:05Z | en_US |
dc.date.available | 2007-07-05T13:43:05Z | en_US |
dc.date.issued | 1997-09 | en_US |
dc.identifier.citation | Microelectronic Engineering 34N2 (1997) 137-145 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://hdl.handle.net/1850/4207 | en_US |
dc.description | RIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/ | |
dc.description.abstract | Copolymers of trimethysilylmethyl methacrylate and chloromethylstyrene [P(SI-CMS)] have been formulated as negative resists for exposure at 193 nm. To achieve maximum sensitivity, absorption has been targeted so that the amount of radiation exposing the base of a given film thickness is I0e^−1, leading to an optimum optical absorbance of log10e, or 0.434. Through control of the mole ratio of the monomers in the P(SI-CMS) copolymer, optimum response has been tailored for coating thicknesses from 2000 Å to 5500 Å. Optimal formulations yield working sensitivities of from 4 to 20 mJ/cm^2 for materials having a Mw of 4 × 10^4 g/mole, with resolution demonstrated below 0.4 μm. Resists exhibit etching resistance in O2 RIE and are suitable for application in both single layer and bi-layer processes (Refer to PDF file for exact formulas). | en_US |
dc.description.sponsorship | n/a | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam | en_US |
dc.relation.ispartofseries | vol. 34 | en_US |
dc.relation.ispartofseries | no. 2 | en_US |
dc.title | 193 nm lithography using a negative acting P(SI-CMS) resist | en_US |
dc.type | Article | en_US |
dc.subject.keyword | Copolymers | en_US |
dc.subject.keyword | Crosslinking | en_US |
dc.subject.keyword | Negative resists | en_US |
dc.identifier.url | http://dx.doi.org/10.1016/S0167-9317(97)00005-1 | |