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dc.contributor.authorSmith, Bruceen_US
dc.contributor.authorNovembre, Anthonyen_US
dc.contributor.authorMixon, Daviden_US
dc.identifier.citationMicroelectronic Engineering 34N2 (1997) 137-145en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases:
dc.description.abstractCopolymers of trimethysilylmethyl methacrylate and chloromethylstyrene [P(SI-CMS)] have been formulated as negative resists for exposure at 193 nm. To achieve maximum sensitivity, absorption has been targeted so that the amount of radiation exposing the base of a given film thickness is I0e^−1, leading to an optimum optical absorbance of log10e, or 0.434. Through control of the mole ratio of the monomers in the P(SI-CMS) copolymer, optimum response has been tailored for coating thicknesses from 2000 Å to 5500 Å. Optimal formulations yield working sensitivities of from 4 to 20 mJ/cm^2 for materials having a Mw of 4 × 10^4 g/mole, with resolution demonstrated below 0.4 μm. Resists exhibit etching resistance in O2 RIE and are suitable for application in both single layer and bi-layer processes (Refer to PDF file for exact formulas).en_US
dc.publisherElsevier Science B.V., Amsterdamen_US
dc.relation.ispartofseriesvol. 34en_US
dc.relation.ispartofseriesno. 2en_US
dc.title193 nm lithography using a negative acting P(SI-CMS) resisten_US
dc.subject.keywordNegative resistsen_US

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