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dc.contributor.authorPrasad, Awadheshen_US
dc.contributor.authorLai, Ying-Chengen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.date.accessioned2007-09-13T01:48:05Zen_US
dc.date.available2007-09-13T01:48:05Zen_US
dc.date.issued2003-07-21en_US
dc.identifier.citationPhysics Letters A 314N1-2 (2003) 44-50en_US
dc.identifier.issn0375-9601en_US
dc.identifier.urihttp://hdl.handle.net/1850/4674en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractWe demonstrate that complicated basins of attraction can occur in time-delay coupled, external-cavity semiconductor lasers. In particular, we find that there can be multiple coexisting attractors associated with low-frequency fluctuations in the laser power output, and prediction of the asymptotic attractor for specific initial conditions is practically impossible.en_US
dc.description.sponsorshipThis work is supported by AFOSR under Grant No. F49620-98-1-0400.en_US
dc.language.isoen_USen_US
dc.publisherElsevier Science B.V.en_US
dc.relation.ispartofseriesvol. 314en_US
dc.relation.ispartofseriesno. 1-2en_US
dc.titleComplicated basins in external-cavity semiconductor lasersen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1016/S0375-9601(03)00880-6


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