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dc.contributor.authorHohl-AbiChedid, Angelaen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorErneux, Thomasen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.date.accessioned2007-09-13T02:06:00Zen_US
dc.date.available2007-09-13T02:06:00Zen_US
dc.date.issued1997-06en_US
dc.identifier.citationPhysics and Simulation of Optoelectronic Devices V 2994 (1997) 647-663en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/1850/4703en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractThe dynamics of two mutually coupled but non-identical semiconductor lasers are studied experimentally, numerically and analytically for weak coupling. The lasers have dissimilar relaxation oscillation frequencies and intensities, and their mutual coupling strength is asymmetric. We find that the lasers may entrain to the relaxation oscillation frequency of either one of the lasers. The form of entrainment is a special form of synchronization, called localized synchronization, where one laser exhibits strong oscillations and the other one weak oscillations. We perform a bifurcation analysis to explain the mechanism of entrainment by taking advantage of the inherently large parameters in a semiconductor laser, the linewidth enhancement factor c and the ratio of the carrier and photon lifetime T.en_US
dc.description.sponsorshipA.H. wishes to thank the National Research Council for supporting her work. The work of T.E was supported by the U.S. Air Force Office of Scientific Research grant AFOSR-93-1-0084, the National Science Foundation grant DMS-9308009, the Fonds National de la Recherche Scientifique (Belgium) and the InterUniversity Attraction Pole of the Belgian government.en_US
dc.language.isoen_USen_US
dc.publisherThe International Society for Optical Engineering (SPIE)en_US
dc.relation.ispartofseriesvol. 2994en_US
dc.subjectCoupled lasersen_US
dc.subjectNonlinear dynamicsen_US
dc.subjectSemiconductor arraysen_US
dc.titleMutual entrainment in delay-coupled non-identical semiconductor lasersen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1117/12.275615


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