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dc.contributor.authorPrasad, Awadheshen_US
dc.contributor.authorLai, Ying-Chengen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.date.accessioned2007-09-13T02:15:22Zen_US
dc.date.available2007-09-13T02:15:22Zen_US
dc.date.issued2001-08en_US
dc.identifier.citationJournal of Optics B Quantum and Semiclassical Optics 3N4 (2001) 242-250en_US
dc.identifier.issn1464-4266en_US
dc.identifier.urihttp://hdl.handle.net/1850/4719en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractWe investigate the dynamical origin of low-frequency fluctuations (LFFs) in external cavity semiconductor lasers by utilizing a simplified, three-dimensional model derived from the infinite-dimensional Lang-Kobayashi (LK) equations. The simplified model preserves the dynamical properties of the external-cavity modes (ECMs) and antimodes which play a fundamental role in the generation of LFFs. This model yields a clear picture of the dynamical origin of the LFFs. Two distinct regions are observed in parameter space, one with the presence of the maximum-gain mode (MGM), and another without it. In particular, we show that, in the absence of noise, LFFs are a consequence of the dynamical interactions among different ECMs and antimodes. When a small amount of noise is present, LFFs result from an intermittent switching of trajectories among different coexisting attractors in the phase space. The presence of double peaks in the distribution of power dropout times, which has been observed recently in experiments, is explained, and a scaling relation is obtained between the average switching time and the noise strength.en_US
dc.language.isoen_USen_US
dc.publisherInstitute of Physicsen_US
dc.relation.ispartofseriesvol. 3en_US
dc.relation.ispartofseriesno. 4en_US
dc.subjectFluctuation phenomenaen_US
dc.subjectNonlinear dynamicsen_US
dc.subjectSemiconductor lasersen_US
dc.titleLow-frequency fluctuations in external cavity semiconductor lasers: understanding based on a simple dynamical modelen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1088/1464-4266/3/4/308


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