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dc.contributor.authorBussjager, Rebeccaen_US
dc.contributor.authorErdmann, Reinharden_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorMcKeon, Brianen_US
dc.contributor.authorFanto, Michaelen_US
dc.contributor.authorJohns, Steveen_US
dc.contributor.authorHayduk, Michaelen_US
dc.contributor.authorOsman, Josephen_US
dc.contributor.authorMorrow, Alanen_US
dc.contributor.authorGreen, Malcolmen_US
dc.contributor.authorStoffel, Nancyen_US
dc.contributor.authorTan, Songshengen_US
dc.contributor.authorShick, Charlesen_US
dc.contributor.authorBacon, Wesleyen_US
dc.contributor.authorBeaman, Bryanen_US
dc.date.accessioned2007-09-13T02:30:47Zen_US
dc.date.available2007-09-13T02:30:47Zen_US
dc.date.issued2006-05-12en_US
dc.identifier.citationEnabling Photonics Technologies for Defense, Security, and Aerospace Applications II 6243 (2006) 62430J-1 - 62430J-12en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/1850/4754en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractThe Air Force Research Laboratory, Binoptics Corp., and Infotonics Technology Center worked collaboratively to package and characterize recently developed diode based ring lasers that operate at 1550 nm in a diamond shaped cavity. The laser modes propagate bi-directionally; however, uniaxial propagation may be induced by optical injection or by integrating a mirror. Round trip cavity length was 500 μm in 3.5 μm wide ridge waveguides, and four polarizationmaintaining lensed fibers provided access to the input and output modes. A signal from a tunable diode laser, incident at one port, served to injection lock both of the counter-propagating circulating modes. When the input signal was timeencoded by an optical modulator, the encoding was transferred to both modes with an inverted time-intensity profile. Performance, in terms of fidelity and extinction ratio, is characterized for selected pulsed and monochromatic formats from low frequencies to those exceeding 12 GHz. A rate equation model is proposed to account for certain aspects of the observed behavior and analog and digital applications are discussed.en_US
dc.description.sponsorshipThis work was supported through AFRL Grant Award F30602-03-2-0228.en_US
dc.language.isoen_USen_US
dc.publisherThe International Society for Optical Engineering (SPIE)en_US
dc.relation.ispartofseriesvol. 6243en_US
dc.subjectBi-directional semiconductor ring lasersen_US
dc.subjectDiamond shapeden_US
dc.subjectLaser injectionen_US
dc.titleInjection characterization of packaged bi-directional diamond shaped ring lasers at 1550 nmen_US
dc.typeArticleen_US
dc.subject.keywordRing lasersen_US
dc.subject.keywordLaser injectionen_US
dc.subject.keywordDiode baseden_US
dc.identifier.urlhttp://dx.doi.org/10.1117/12.670325


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