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dc.contributor.authorVarangis, Petrosen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorLester, Lukeen_US
dc.date.accessioned2007-09-25T13:40:57Zen_US
dc.date.available2007-09-25T13:40:57Zen_US
dc.date.issued1998-12-21en_US
dc.identifier.citationPhysics Letters A 250N1-3 (1998) 117-122en_US
dc.identifier.issn0375-9601en_US
dc.identifier.urihttp://hdl.handle.net/1850/4854en_US
dc.description.abstractWe investigate experimentally and theoretically the variation of the emission linewidth of an optically-injected semiconductor laser across a resonant period-doubling bifurcation. Close to the dynamical instability, the intrinsic and external phase fluctuations are amplified, resulting in a spectral linewidth in excess of that accounted for by the spontaneous-emission process alone.en_US
dc.description.sponsorshipP.M.V. acknowledges support from the National Research Council.en_US
dc.language.isoen_USen_US
dc.publisherElsevier Science B.V.en_US
dc.relation.ispartofseriesvol. 250en_US
dc.relation.ispartofseriesno. 1-3en_US
dc.subjectBifurcationen_US
dc.subjectLinewidthen_US
dc.subjectNoiseen_US
dc.subjectSemiconductor laseren_US
dc.titleLinewidth broadening across a dynamical instabilityen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1016/S0375-9601(98)00830-5


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