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dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorErneux, Thomasen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.identifier.citationOptics Communications 159N1-3 (1999) 177-183en_US
dc.description.abstractThe equations for a semiconductor laser subject to injection are examined numerically and analytically for large values of the detuning parameter. Our analysis is motivated by recent experimental studies using either distributed feedback laser diodes or vertical-cavity surface-emitting lasers. For negative detuning, we show that a pulsating intensity regime may coexist with a stable steady state. Transitions between time-periodic and steady states as the injection rate is progressively increased or decreased appear through sudden jumps. Of particular interest is the fact that the upper locking point corresponds to a bifurcation point to quasiperiodic intensity oscillations. For positive detuning, the pulsating intensity regime is the only stable state until steady state locking smoothly occurs through a Hopf bifurcation point. Our analysis is based on a new asymptotic analysis of the semiconductor laser equations which allows analytical expressions for all bifurcation points.en_US
dc.description.sponsorshipThe research of TE was supported by the US Air Force Office of Scientific Research grant AFOSR F49620-95-0065, the National Science Foundation grant DMS-9625843, NATO Collaborative Research Grant 961113, the Fonds National de la Recherche Scientifique (Belgium) and the InterUniversity Attraction Pole of the Belgian government. The research of VK was supported by the US Air Force Office of Scientific Research through an University Research Resident Program.en_US
dc.publisherElsevier Science B.V.en_US
dc.relation.ispartofseriesvol. 159en_US
dc.relation.ispartofseriesnos. 1-3en_US
dc.titleLargely detuned injection-locked semiconductor lasersen_US

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