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dc.contributor.authorVarangis, Petrosen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorErneux, Thomasen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorLester, Lukeen_US
dc.date.accessioned2007-09-27T08:53:07Zen_US
dc.date.available2007-09-27T08:53:07Zen_US
dc.date.issued1997-03-24en_US
dc.identifier.citationPhysical Review Letters 78N12 (1997) 2353-2356en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://hdl.handle.net/1850/4907en_US
dc.description.abstractWe theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.en_US
dc.description.sponsorshipThe work of T.E. was supported by the U.S. Air Force Office of Scientific Research Grant No. AFOSR-93-1-0084, the National Science Foundation Grant No. DMS-9308009, the Fonds National de la Recherche Scientifique (Belgium) and the InterUniversity Attraction Pole of the Belgian government. The work of L.F.L. was supported by the Optoelectronics Research Grant No. AFOSR-F49620-96-1-0079.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofseriesvol. 78en_US
dc.relation.ispartofseriesno. 12en_US
dc.titleFrequency entrainment in optically injected semiconductor lasersen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1103/PhysRevLett.78.2353


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