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dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorSimpson, Thomasen_US
dc.contributor.authorLiu, Jia-Mingen_US
dc.date.accessioned2007-10-09T16:50:19Zen_US
dc.date.available2007-10-09T16:50:19Zen_US
dc.date.issued1995-11-06en_US
dc.identifier.citationApplied Physics Letters 67N19 (1995) 2780-2782en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/1850/5047en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractWe have experimentally obtained and theoretically analyzed a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied. Two distinct islands of chaos have been identified in the injection-locked region. They are separated by regions of period one and period two solutions. Spontaneous emission noise obscures the observation of high periodic orbits.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesvol. 67en_US
dc.relation.ispartofseriesno. 19en_US
dc.titleInstabilities and chaos in optically injected semiconductor lasersen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1063/1.114591


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