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dc.contributor.authorSimpson, Thomasen_US
dc.contributor.authorLiu, Jia-Mingen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorAlsing, Paulen_US
dc.date.accessioned2007-10-09T16:51:45Zen_US
dc.date.available2007-10-09T16:51:45Zen_US
dc.date.issued1994-06-27en_US
dc.identifier.citationApplied Physics Letters 64N26 (1994) 3539-3541en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/1850/5050en_US
dc.description.abstractExperimental measurements and a single-mode analysis of a quantum-well laser diode subject to strong optical injection are combined to demonstrate that the diode follows a period-doubling route to chaos. All laser parameters used in this model, including the influence of spontaneous emission noise, were experimentally determined based on the four-wave mixing technique. The transition to chaos can be used to reduce the uncertainty in the value of the linewidth enhancement factor.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesvol. 64en_US
dc.relation.ispartofseriesno. 26en_US
dc.titlePeriod-doubling route to chaos in a semiconductor laser subject to optical injectionen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1063/1.111218


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