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dc.contributor.authorVarangis, Petrosen_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.contributor.authorErneux, Thomasen_US
dc.contributor.authorLester, Lukeen_US
dc.date.accessioned2007-10-30T01:09:48Zen_US
dc.date.available2007-10-30T01:09:48Zen_US
dc.date.issued1998-06-15en_US
dc.identifier.citationJournal of Applied Physics 83N12 (1998) 8071-8073en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/1850/5165en_US
dc.description.abstractWe demonstrate theoretically and verify experimentally that injection locking may be used to achieve double-sideband suppressed-carrier modulation of semiconductor lasers. Our theoretical investigation explains the suppression of the optical carrier and illustrates the dominant role of the phase in prescribing the response of the injected laser.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesvol. 83en_US
dc.relation.ispartofseriesno. 12en_US
dc.subjectLaser mode lockingen_US
dc.subjectLaser theoryen_US
dc.subjectOptical modulationen_US
dc.subjectSemiconductor lasersen_US
dc.titleAll-optical double-sideband suppressed-carrier modulation of semiconductor lasersen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1063/1.367903


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