Systematic inclusion of defects in pure carbon single-wall nanotubes and their effect on the Raman D-band
Date
2005-01-11Author
Dillon, Anne
Parilla, Philip
Alleman, Jeffrey
Gennett, Thomas
Jones, K.
Heben, Michael
Metadata
Show full item recordAbstract
The Raman D-band feature (∼1350 cm[-][1]) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport-limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The DIG ratio is ∼1/90 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.