| dc.contributor.author | Dillon, Anne | en_US |
| dc.contributor.author | Parilla, Philip | en_US |
| dc.contributor.author | Alleman, Jeffrey | en_US |
| dc.contributor.author | Gennett, Thomas | en_US |
| dc.contributor.author | Jones, K. | en_US |
| dc.contributor.author | Heben, Michael | en_US |
| dc.date.accessioned | 2006-07-19T19:43:34Z | en_US |
| dc.date.available | 2006-07-19T19:43:34Z | en_US |
| dc.date.issued | 2005-01-11 | en_US |
| dc.identifier.citation | Chemical Physics Letters 401N4-6 (2005) 522-528 | en_US |
| dc.identifier.issn | 0009-2614 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1850/2180 | en_US |
| dc.description.abstract | The Raman D-band feature (∼1350 cm[-][1]) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport-limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The DIG ratio is ∼1/90 and 1/40 for excitation at 2.54 and 1.96 eV, respectively. | en_US |
| dc.format.extent | 37365 bytes | en_US |
| dc.format.mimetype | application/pdf | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | Elsevier: Chemical Physics Letters | en_US |
| dc.subject | Defects | en_US |
| dc.subject | Raman D-band | en_US |
| dc.subject | Single-wall nanotubes | en_US |
| dc.title | Systematic inclusion of defects in pure carbon single-wall nanotubes and their effect on the Raman D-band | en_US |
| dc.type | Abstract | en_US |
| dc.identifier.url | http://dx.doi.org/10.1016/j.cplett.2004.11.104 | |
