Cavity enhancement of resonant frequencies in semiconductor lasers subject to optical injection
Date
1995-12Author
Simpson, Thomas
Liu, Jia-Ming
Huang, Kai-Feng
Tai, Kuochou
Clayton, Christopher
Gavrielides, Athanasios
Kovanis, Vassilios
Metadata
Show full item recordAbstract
The injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.