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dc.contributor.authorSimpson, Thomasen_US
dc.contributor.authorLiu, Jia-Mingen_US
dc.contributor.authorHuang, Kai-Fengen_US
dc.contributor.authorTai, Kuochouen_US
dc.contributor.authorClayton, Christopheren_US
dc.contributor.authorGavrielides, Athanasiosen_US
dc.contributor.authorKovanis, Vassiliosen_US
dc.date.accessioned2007-10-09T16:49:17Zen_US
dc.date.available2007-10-09T16:49:17Zen_US
dc.date.issued1995-12en_US
dc.identifier.citationPhysical Review A 52N6 (1995) R4348-R4351en_US
dc.identifier.issn1050-2947en_US
dc.identifier.urihttp://hdl.handle.net/1850/5045en_US
dc.descriptionRIT community members may access full-text via RIT Libraries licensed databases: http://library.rit.edu/databases/
dc.description.abstractThe injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.en_US
dc.description.sponsorshipThe authors would like to thank Dr. Tim Day for the loan of the New Focus tunable laser. The work of T.B.S. and J.M.L. was supported by the U.S. Air Force's Phillips Laboratory under Contract No. F29601-94-C-0166.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofseriesvol. 52en_US
dc.relation.ispartofseriesno. 6en_US
dc.titleCavity enhancement of resonant frequencies in semiconductor lasers subject to optical injectionen_US
dc.typeArticleen_US
dc.identifier.urlhttp://dx.doi.org/10.1103/PhysRevA.52.R4348


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